型号:

IPP12CN10N G

RoHS:无铅 / 符合
制造商:Infineon Technologies描述:MOSFET N-CH 100V 67A TO-220
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IPP12CN10N G PDF
标准包装 500
系列 OptiMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 100V
电流 - 连续漏极(Id) @ 25° C 67A
开态Rds(最大)@ Id, Vgs @ 25° C 12.9 毫欧 @ 67A,10V
Id 时的 Vgs(th)(最大) 4V @ 83µA
闸电荷(Qg) @ Vgs 65nC @ 10V
输入电容 (Ciss) @ Vds 4320pF @ 50V
功率 - 最大 125W
安装类型 通孔
封装/外壳 TO-220-3
供应商设备封装 PG-TO220-3
包装 管件
其它名称 IPP12CN10NGX
IPP12CN10NGXK
SP000096468
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